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Sanyo Electric Components Datasheet

CPH6619 Datasheet

N-Channel and P-Channel Silicon MOSFETs

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Ordering number : ENA0473
CPH6619
SANYO Semiconductors
DATA SHEET
CPH6619
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET
for driving P-channel MOSFET enables high-density mounting.
Excellent ON-resistance characterristic.
Best suited for load switches.
N-channel 1.5V drive, P-channel 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
30 --12
±10 ±8
0.4 --2
1.6 --8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
0.4 1.3 V
0.13
0.22
S
2.9 3.7
3.7 5.2
6.4 12.8
7 pF
5.9 pF
2.3 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72006PE MS IM TC-00000048 No. A0473-1/7


Sanyo Electric Components Datasheet

CPH6619 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

CPH6619
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1A
ID=--1A, VGS=--4.5V
ID=--0.5A, VGS=--2.5V
ID=--0.2A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--2.0A
VDS=--6V, VGS=--4.5V, ID=--2.0A
VDS=--6V, VGS=--4.5V, ID=--2.0A
IS=--2.0A, VGS=0V
Ratings
min typ max
Unit
19 ns
65 ns
155 ns
120 ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2 V
--12
--0.3
1.74
2.9
130
180
240
310
90
80
14
53
53
52
4.6
0.7
1.3
--0.89
V
--10 µA
±10 µA
--1.0 V
S
165 m
245 m
350 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
Package Dimensions
unit : mm (typ)
7018A-007
2.9
654
0.15
0.05
12
0.95
3
0.4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
Electrical Connection
654
1 23
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
No. A0473-2/7


Part Number CPH6619
Description N-Channel and P-Channel Silicon MOSFETs
Maker Sanyo Semicon Device
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CPH6619 Datasheet PDF






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