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Sanyo Electric Components Datasheet

DS135A Datasheet

Diffused Junction Type Silicon Diode

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Ordering number : ENA0150
DS135A
SANYO Semiconductors
DATA SHEET
DS135A
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
Features
Plastic molded structure.
Peak reverse voltage : VRM= --100 to --400V.
Average output current : IO=1.0A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Ta=60°C
50Hz sine wave, 1cycle
Electrical Characteristics at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
Conditions
IF=1.0A
VR : At each VRM
DS135AE
--100
DS135AD
--200
1.0
45
150
--40 to +150
DS135AC
--400
Unit
V
A
A
°C
°C
Ratings
min typ max
Unit
1.0 V
--10 µA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71107RC TI IM TB-00001905 No. A0150-1/3


Sanyo Electric Components Datasheet

DS135A Datasheet

Diffused Junction Type Silicon Diode

No Preview Available !

Package Dimensions
unit : mm (typ)
7808-001
Cathode mark
DS135A
0.8
2.5
IO -- Ta
1.2
Resistive, inductive load
1.0
Capacitive
load
0.8
0.6 L=58mm
20mm
0.4
10mm
L=58mm
20mm
10mm
0.2
L1 L=L1+L2 L2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10342
IFSM -- n
50
40
30
50Hz
20
10
0
1.0
23
5 7 10
23
5 7 100
Number of Cycles, n
IT10344
IF -- VF
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0
0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF -- V
IT10343
No. A0150-2/3


Part Number DS135A
Description Diffused Junction Type Silicon Diode
Maker Sanyo Semicon Device
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DS135A Datasheet PDF






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