Package Dimensions
unit : mm 2208
[EC3A03B]
0.35 0.2 0.15 0.05 1
0.4
Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. 0.15
0.25
2
0.05 1.0
0.65
3 0.5
(Bottom View)
0.25
0.05
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg.
EC3H01B- VHF Band Low-Noise Amplifer and OSC Applications
EC3H02B- VHF to UHF Low-Noise Wide-Band Amplifier Applications
EC3H02BA- VHF to UHF Wide-Band Low-Noise Amplifier Applications
Full PDF Text Transcription
Click to expand full text
www.DataSheet.co.kr
Ordering number : ENN7295A
EC3A03B
N-Channel Silicon Junction FET
EC3A03B
Impedance Converter, Infrared Sensor Applications
Preliminary Features
• • •
Package Dimensions
unit : mm 2208
[EC3A03B]
0.35 0.2 0.15 0.05 1
0.4
Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products.
0.15
0.25
2
0.05 1.0
0.65
3 0.5
(Bottom View)
0.25
0.05
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions
1 : Source 2 : Drain 3 : Gate SANYO : ECSP1006-3
Ratings 40 --40 10 1 100 150 --55 to +150 Unit V V mA mA mW °C °C
0.
EC3A03B Datasheet
