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Sanyo Electric Components Datasheet

EC3A03B Datasheet

N-Channel Silicon Junction FET

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Ordering number : ENN7295A
EC3A03B
N-Channel Silicon Junction FET
EC3A03B
Impedance Converter,
Infrared Sensor Applications
Preliminary
Features
Small IGSS.
Small Ciss.
Ultraminiature package facilitates miniaturization in
end products.
Package Dimensions
unit : mm
2208
[EC3A03B]
0.35
0.2
0.15 0.15
0.05
1
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Marking : JV
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--10µA, VDS=0
VGS=--20V, VDS=0
VDS=10V, ID=1µA
VDS=10V, VGS=0
VDS=10V, VGS=0, f=1kHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
3 0.05
0.5
(Bottom View)
0.6
1 : Source
2 : Drain
3 : Gate
SANYO : ECSP1006-3
Ratings
40
--40
10
1
100
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
min
--40
Ratings
typ
50
0.05
--1.5
0.13
1.7
0.7
max
--500
--4.0
130
Unit
V
pA
V
µA
mS
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22503 TS IM TA-100367 / O3002 TS IM TA-100288 No.7295-1/3
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

EC3A03B Datasheet

N-Channel Silicon Junction FET

No Preview Available !

www.DataSheet.co.kr
Type No. Indication (Top view)
JV
EC3A03B
Electrical Connection (Top view)
Polarity mark (Top)
Source
Drain
Gate
*Electrodes : Bottom
Polarity mark (Top)
Source
Drain
Gate
140
120
100
80
60
40
20
0
0
--2.4
10
7
5
3
2
ID -- VDS
VGS=0
--0.2V
--0.4V
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
1 234 5
Drain-to-Source Voltage, VDS -- V ITR00837
ID -- VGS
160
VDS=10V
IDSS=100µA 140
120
100
80
60
40
20
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
Gate-to-Source Voltage, VGS -- V ITR00840
Ciss -- VDS
VGS=0
f=1MHz
1.0
7
5
3
1.0
23
5 7 10
23
5 7 100
Drain-to-Source Voltage, VDS -- V IT04944
140
120
100
80
60
40
20
0
0
--10
7
5
3
2
ID -- VDS
VGS=0
--0.2V
--0.4V
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
4 8 12 16 20
Drain-to-Source Voltage, VDS -- V ITR00838
VGS(off) -- IDSS
VDS=10V
ID=1µA
--1.0
7
5
3
3
5
3
2
5 7 100
Drain Current, IDSS -- µA
Crss -- VDS
23
IT04943
VGS=0
f=1MHz
1.0
7
5
3
2
0.1
1.0
2 3 5 7 10
2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT04945
No.7295-2/3
Datasheet pdf - http://www.DataSheet4U.net/


Part Number EC3A03B
Description N-Channel Silicon Junction FET
Maker Sanyo Semicon Device
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