ECH8309 - P-Channel Silicon MOSFET

Datasheet Summary

Features

P-Channel Silicon MOSFET General-Purpose Switching Device.

Sanyo Semicon Device

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Datasheet Details

Part number	ECH8309
Manufacturer	Sanyo Semicon Device
File Size	117.47 KB
Description	P-Channel Silicon MOSFET
Datasheet	ECH8309 Datasheet
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www.DataSheet.co.kr Ordering number : ENA1418A ECH8309 SANYO Semiconductors DATA SHEET ECH8309 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive. Halogen free compliance. Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --12 ±10 --9.5 --40 1.

Published: Dec 28, 2011 |