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Sanyo Electric Components Datasheet

ECH8410 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1331
ECH8410
SANYO Semiconductors
DATA SHEET
ECH8410
Features
Low ON-resistance.
4V drive.
Halogen free compliance.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
30
±20
12
60
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KQ
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
min
30
1.2
Ratings
typ
max
1
±10
2.6
Unit
V
μA
μA
V
7.5
7.5
13
15.5
S
10 mΩ
18.2 mΩ
22 mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
N2509PE TK IM TC-00002188 No. A1331-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8410 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
ECH8410
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=15V, VGS=10V, ID=12A
VDS=15V, VGS=10V, ID=12A
VDS=15V, VGS=10V, ID=12A
IS=12A, VGS=0V
Ratings
min typ max
Unit
1700
pF
300 pF
200 pF
17 ns
50 ns
110 ns
72 ns
31 nC
5.5 nC
5.5 nC
0.8 1.2 V
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
0.15
0 t o 0.02
1
0.65
4
0.3
Electrical Connection
87 6 5
12 3 4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Bot t om View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Switching Time Test Circuit
VIN
10V
0V
PW=10μs
D.C.1%
VIN
G
VDD=15V
ID=6A
RL=2.5Ω
D VOUT
P.G 50Ω
S ECH8410
No. A1331-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8410
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8410 Datasheet PDF






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