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Ordering number : ENN7288B
ECH8601
N-Channel Silicon MOSFET
ECH8601
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 7 40 1.4 1.