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ECH8601M - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Built-in gate protection resistor.
  • 2.5V drive.
  • Best suited for LiB charging and discharging switch.
  • Common-drain type.
  • Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg.

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Ordering number : ENA1174 ECH8601M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type. • Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm2✕0.8mm) Ratings 24 ±12 8 60 1.5 1.