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Ordering number : ENA1562
ECH8602M
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SANYO Semiconductors
DATA SHEET
ECH8602M
Features
• • • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 30 ±12 6 60 1.4 1.