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ECH8602M - N-Channel Power MOSFET

Key Features

  • 2.5V drive.
  • Common-drain type.
  • Protection diode in.
  • Best suited for LiB charging and discharging switch.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mou.

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Datasheet Details

Part number ECH8602M
Manufacturer onsemi
File Size 211.01 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ECH8602M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1562A ECH8602M N-Channel Power MOSFET 30V, 6A, 30mΩ, Dual ECH8 http://onsemi.com Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±12 6 60 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.