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Sanyo Electric Components Datasheet

ECH8609 Datasheet

Ultrahigh-Speed Switching Applications

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Ordering number : ENN0000
ECH8609
N-Channel and P-Channel Silicon MOSFETs
ECH8609
Ultrahigh-Speed Switching Applications
Preliminary
Features
The ECH8609 incorporates an N-channel
MOSFET and a P-channel MOSFET that
feature low ON-resistance and high-speed
switching, thereby enabling hugh-density
mounting.
4V drive.
Package Dimensions
unit : mm
2206
[ECH8609]
0.3 0.15
5678
Specifications
Absolute Maximum Ratings at Ta=25°C
43 21
0.65
2.9
(Bottom view)
(Side view)
(Side view)
8765
12 34
0.65
(Top view)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)1unit
Mounted on a ceramic board (900mm20.8mm)
N-channel
P-channel
30 --30
±20 ±20
6 --4
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : FB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0102 TS IM SAITOU(M) No.0000-1/6


Sanyo Electric Components Datasheet

ECH8609 Datasheet

Ultrahigh-Speed Switching Applications

No Preview Available !

ECH8609
Continued from preceding page.
Parameter
Symbol
Conditions
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=2A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
IS=6A, VGS=0
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
IS=--4A, VGS=0
min
1.0
3.3
Ratings
typ
5
25
52
510
105
70
15
74
43
37
11
1.9
2.9
0.85
max
2.4
34
75
1.2
Unit
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--30
--1.0
3.3 5
50
87
550
120
90
13
110
65
75
14
2.2
2.5
--0.88
V
--1 µA
±10 µA
--2.4 V
S
67 m
120 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
Switching Time Test Circuit
[N-channel]
[P-channel]
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=3A
RL=5
D VOUT
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --2A
RL=7.5
D VOUT
P.G 50S
P.G 50S
No.0000-2/6


Part Number ECH8609
Description Ultrahigh-Speed Switching Applications
Maker Sanyo Semicon Device
PDF Download

ECH8609 Datasheet PDF





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