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ECH8609 - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2206 [ECH8609] 0.25.
  • The ECH8609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling hugh-density mounting. 4V drive. 0.3 0.15 5 6 7 8 2.8 2.3 0.25 4 3 2 0.65 2.9 1 0.07 (Side view) 8 7 6 5 (Bottom view) 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current.

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Datasheet Details

Part number ECH8609
Manufacturer Sanyo Semicon Device
File Size 83.31 KB
Description Ultrahigh-Speed Switching Applications
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www.DataSheet4U.com Ordering number : ENN0000 ECH8609 N-Channel and P-Channel Silicon MOSFETs ECH8609 Ultrahigh-Speed Switching Applications Preliminary Features • Package Dimensions unit : mm 2206 [ECH8609] 0.25 • The ECH8609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling hugh-density mounting. 4V drive. 0.3 0.15 5 6 7 8 2.8 2.3 0.25 4 3 2 0.65 2.9 1 0.
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