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Sanyo Electric Components Datasheet

ECH8619 Datasheet

N-Channel and P-Channel Silicon MOSFETs

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Ordering number : ENA0658
ECH8619
SANYO Semiconductors
DATA SHEET
ECH8619
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
Mounted on a ceramic board (900mm20.8mm)
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FM
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.5A, VGS=4V
N-channel
P-channel
60 --60
±20 ±20
3 --2
20 --20
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
60 V
1 µA
±10 µA
1.2 2.6 V
2.2 3.8
S
70 93 m
92 133 m
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107PE TI IM TC-00000521 No. A0658-1/6


Sanyo Electric Components Datasheet

ECH8619 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

ECH8619
Continued from preceding page.
Parameter
Symbol
Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
IS=3A, VGS=0V
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--0.5A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
IS=--2A, VGS=0V
Ratings
min typ max
Unit
560 pF
60 pF
41 pF
11 ns
11 ns
61 ns
32 ns
12.8
nC
2.1 nC
2.7 nC
0.81
1.2 V
--60
--1.2
2.1 3.5
160
210
660
54
42
10.5
7.0
93
30
15
2.1
2.7
--0.82
V
--1 µA
±10 µA
--2.6 V
S
210 m
295 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
0.15
0 to 0.02
1
0.65
4
0.3
Electrical Connection
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
No. A0658-2/6


Part Number ECH8619
Description N-Channel and P-Channel Silicon MOSFETs
Maker Sanyo Semicon Device
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ECH8619 Datasheet PDF





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