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ECH8622R - N-Channel Silicon MOSFET

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Features

  • General-Purpose Switching Device.

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Datasheet Details

Part number ECH8622R
Manufacturer Sanyo Semicon Device
File Size 67.90 KB
Description N-Channel Silicon MOSFET
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www.DataSheet4U.com Ordering number : EN8719 ECH8622R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8622R Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2! 0.8mm) 1unit Mounted on a ceramic board (900mm2! 0.8mm) Conditions Ratings 30 ±12 7 40 1.4 1.
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