Ordering number : EN8719
N-Channel Silicon MOSFET
ECH8622R General-Purpose Switching Device
• Low ON-resistance.
• Best suited for lithium battery applications.
• 2.5V drive.
• Composite type, facilitating high-density mounting.
• Drain common specifications.
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2! 0.8mm) 1unit
Mounted on a ceramic board (900mm2! 0.8mm)
--55 to +150
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Reverse Transfer Capacitance
Marking : WG
18 23 mΩ
19 25 mΩ
22 29 mΩ
25 34 mΩ
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