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Sanyo Electric Components Datasheet

ECH8622R Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8719
ECH8622R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8622R General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Best suited for lithium battery applications.
2.5V drive.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2! 0.8mm) 1unit
Mounted on a ceramic board (900mm2! 0.8mm)
Ratings
30
±12
7
40
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WG
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
0.5
6
12.6
13.3
14.3
15
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
10 S
18 23 m
19 25 m
22 29 m
25 34 m
1220
pF
180 pF
140 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PE MS IM TB-00002071 No.8719-1/4


Sanyo Electric Components Datasheet

ECH8622R Datasheet

N-Channel Silicon MOSFET

No Preview Available !

ECH8622R
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=7A
VDS=10V, VGS=4.5V, ID=7A
VDS=10V, VGS=4.5V, ID=7A
IS=7A, VGS=0V
Ratings
min typ max
Unit
585 ns
1680
ns
4960
ns
2660
ns
14 nC
2 nC
4.3 nC
0.84
1.2 V
Package Dimensions
unit : mm
7011A-003
Top View
2.9
85
0.15
0 to 0.02
1
0.65
4
0.3
Electrical Connection
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
1 2 3 4 8 : Drain
Top view
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=3.5A
RL=4.28
D VOUT
Rg
ECH8622R
P.G 50S
Rg=1k
No.8719-2/4


Part Number ECH8622R
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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