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ECH8621R - N-Channel Silicon MOSFET

Key Features

  • General-Purpose Switching Device.

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www.DataSheet4U.com Ordering number : EN8718 ECH8621R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 8 40 1.4 1.