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Sanyo Electric Components Datasheet

ECH8655R Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1011
ECH8655R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8655R General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Built-in gate protection resistor.
2.5V drive.
Best suited for LiB charging and discharging switch.
Common-drain type.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm) 1unit
When mounted on ceramic substrate (900mm20.8mm)
Ratings
24
±12
9
60
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : TA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
min
24
0.5
4.8
Ratings
typ
max
Unit
V
1 μA
±10 μA
1.3 V
8S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908PE TI IM TC-00001311 No. A1011-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8655R Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
ECH8655R
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=4.5A, VGS=4.5V
ID=4.5A, VGS=4.0V
ID=4.5A, VGS=3.1V
ID=2A, VGS=2.5V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=9A
VDS=10V, VGS=10V, ID=9A
VDS=10V, VGS=10V, ID=9A
IS=9A, VGS=0V
min
9
9
9.2
10.5
Ratings
typ
13
13.5
15
18
320
1100
2400
2100
16.8
1.6
4.8
0.8
max
17
18
21
25.5
1.2
Unit
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
85
0.15
0 to 0.02
1
0.65
4
0.3
Electrical Connection
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=4.5A
RL=2.22Ω
D VOUT
Rg
ECH8655R
P.G 50Ω S
Rg=1kΩ
No. A1011-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8655R
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8655R Datasheet PDF






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