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ECH8656 - N-Channel Power MOSFET

Datasheet Summary

Features

  • ON-resistance RDS(on)1=13mΩ (typ. ).
  • Halogen free compliance.
  • Protection diode in.
  • 1.8V drive.
  • Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic su.

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Datasheet Details

Part number ECH8656
Manufacturer ON Semiconductor
File Size 219.69 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ECH8656 Datasheet
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Full PDF Text Transcription

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Ordering number : EN9010A ECH8656 N-Channel Power MOSFET 20V, 7.5A, 17mΩ, Dual ECH8 http://onsemi.com Features • ON-resistance RDS(on)1=13mΩ (typ.) • Halogen free compliance • Protection diode in • 1.8V drive • Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature VDSS VGSS ID IDP PD PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.
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