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ECH8657 - 35V 4.5A N-Channel Power MOSFET

Datasheet Summary

Features

  • 4V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm).

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Datasheet Details

Part number ECH8657
Manufacturer ON Semiconductor
File Size 308.18 KB
Description 35V 4.5A N-Channel Power MOSFET
Datasheet download datasheet ECH8657 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1710B ECH8657 N-Channel Power MOSFET 35V, 4.5A, 59mΩ, Dual ECH8 http://onsemi.com Features • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Ratings Unit 35 V ±20 V 4.5 A 30 A 1.3 W 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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