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DATA SHEET www.onsemi.com
MOSFET – Power, P-Channel, Dual ECH8
-20 V, -5 A, 38 mW
ECH8654
Features
• Low ON−resistance • 1.8 V Drive • Halogen Free Compliance • Protection Diode in
SOT−28FL / ECH8 CASE 318BF
MARKING DIAGRAM
WZ
LOT No.
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
Parameter
Symbol
Conditions
Ratings Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGSS
±10
V
Drain Current (DC) Drain Current (Pulse)
ID IDP PW ≤ 10 ms,
duty cycle ≤ 1%
−5
A
−40
A
Allowable Power Dissipation
PD When mounted on ceramic substrate
1.3
W
(900 mm2 × 0.8 mm)
1 unit
Total Power Dissipation PT When mounted on
1.5
W
ceramic substrate
(900 mm2 × 0.
ECH8654 Datasheet
