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Sanyo Electric Components Datasheet

ECH8657 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1710A
ECH8657
SANYO Semiconductors
DATA SHEET
ECH8657
Features
4V drive
Halogen free compliance
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
35
±20
4.5
30
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
0.15
0 t o 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TC
TL Lot No.
1
0.65
4
0.3
Bot t om View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
8765
1234
http://semicon.sanyo.com/en/network
D2210 TKIM/42810PE TKIM TC-00002338 No. A1710-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8657 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ECH8657
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=20V, VGS=10V, ID=4.5A
VDS=20V, VGS=10V, ID=4.5A
VDS=20V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=2A
RL=10Ω
D VOUT
ECH8657
P.G 50Ω S
min
35
Ratings
typ
1.2
1.66
45
85
110
230
37
25
6
11
17
9
4.6
1.0
1.0
0.85
max
1
±10
2.6
59
119
155
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
4.0 ID -- VDS
3.5
3.0
2.5
2.0 3.5V
1.5
1.0
0.5 VGS=3.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT14210
ID -- VGS
6
VDS=10V
5
4
3
2
1
0
012345
Gate-to-Source Voltage, VGS -- V IT14211
No. A1710-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8657
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8657 Datasheet PDF






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