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Sanyo Electric Components Datasheet

ECH8661 Datasheet

N-Channel and P-Channel Silicon MOSFETs

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Ordering number : ENA1777
ECH8661
SANYO Semiconductors
DATA SHEET
ECH8661
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
30 --30
±20 ±20
7 --5.5
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TG
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
87 6 5
1234
http://semicon.sanyo.com/en/network
72110PE TK IM TC-00002431 No. A1777-1/6
Datasheet


Sanyo Electric Components Datasheet

ECH8661 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ECH8661
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=15V, VGS=10V, ID=7A
VDS=15V, VGS=10V, ID=7A
VDS=15V, VGS=10V, ID=7A
IS=7A, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2.5A
ID=--2.5A, VGS=--10V
ID=--1.5A, VGS=--4.5V
ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=--15V, VGS=--10V, ID=--5.5A
VDS=--15V, VGS=--10V, ID=--5.5A
VDS=--15V, VGS=--10V, ID=--5.5A
IS=--5.5A, VGS=0V
Ratings
min typ max
Unit
30
1.2
3.7
18
29
39
710
120
72
10
25
43
25
11.8
2.4
2.0
0.79
V
1 μA
±10 μA
2.6 V
S
24 mΩ
41 mΩ
55 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
--30
--1.2
5.2
30
55
58
600
145
110
7.2
23
63
42
13
1.8
3.2
--0.82
--1
±10
--2.6
39
77
82
--1.2
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No. A1777-2/6
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8661
Description N-Channel and P-Channel Silicon MOSFETs
Maker Sanyo Semicon Device
PDF Download

ECH8661 Datasheet PDF





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