ECH8661 - Power MOSFET

onsemi

Key Features

ON-resistance Nch: RDS(on)1=18mΩ(typ. ), Pch: ON-resistance RDS(on)1=30mΩ(typ. ).
The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
4V drive.
Halogen free compliance.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Al.

ECH8661 power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ECH8661
Manufacturer	onsemi
File Size	281.84 KB
Description	Power MOSFET
Datasheet	ECH8661 Datasheet

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Ordering number : ENA1777A ECH8661 Power MOSFET 30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8 http://onsemi.com Features • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) • The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance • Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.