ECH8660 - Power MOSFET

onsemi

Key Features

The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
4V drive.
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch T.

ECH8660 power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ECH8660
Manufacturer	onsemi
File Size	267.35 KB
Description	Power MOSFET
Datasheet	ECH8660 Datasheet

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Ordering number : ENA1358B ECH8660 Power MOSFET 30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8 http://onsemi.com Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) N-channel P-channel 30 --30 ±20 ±20 4.