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ECH8667 - -30V -5.5A P-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)1=30mΩ(typ. ).
  • 4V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When m.

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Datasheet Details

Part number ECH8667
Manufacturer onsemi
File Size 313.71 KB
Description -30V -5.5A P-Channel Power MOSFET
Datasheet download datasheet ECH8667 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1778A ECH8667 P-Channel Power MOSFET –30V, –5.5A, 39mΩ, Dual ECH8 http://onsemi.com Features • ON-resistance RDS(on)1=30mΩ(typ.) • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings Unit --30 V ±20 V --5.5 A --40 A 1.3 W 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device.