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DATA SHEET www.onsemi.com
MOSFET – Power, N-Channel, Dual ECH8
30 V, 8 A, 20.5 mW
ECH8663R
VDSS 30 V
RDS(on) MAX 20.5 mW @ 4.5 V 21 mW @ 4.0 V 23 mW @ 3.1 V 28 mW @ 2.5 V
ID MAX 8A
Features
• Low ON−resistance • 2.5 V Drive • Common−drain Type • Protection Diode in • Built−in Gate Protection Resistor • Best Suited for LiB Charging and Discharging Switch • Halogen Free Compliance
Specifications
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
Parameter
Symbol
Conditions
Ratings Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGSS
±12
V
Drain Current (DC) Drain Current (Pulse)
ID IDP PW ≤ 10 ms,
duty cycle ≤ 1%
8
A
60
A
Allowable Power Dissipation
PD When mounted on
1.4
W
ceramic substrate
(900 mm2 × 0.
ECH8663R Datasheet
