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ECH8668 - N-Channel and P-Channel Silicon MOSFETs

Key Features

  • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

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www.DataSheet.co.kr Ordering number : ENA1510 ECH8668 SANYO Semiconductors DATA SHEET ECH8668 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.