Datasheet4U Logo Datasheet4U.com

ECH8668 - Power MOSFET

Datasheet Summary

Features

  • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
  • 1.8V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Sy.

📥 Download Datasheet

Datasheet preview – ECH8668

Datasheet Details

Part number ECH8668
Manufacturer ON Semiconductor
File Size 262.24 KB
Description Power MOSFET
Datasheet download datasheet ECH8668 Datasheet
Additional preview pages of the ECH8668 datasheet.

📁 Similar Datasheet

  • ECH8668 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8660 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8661 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8662 - N-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8663R - N-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8664R - N-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8667 - P-Channel Silicon MOSFETs (Sanyo Semicon Device)
  • ECH8601 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
  • ECH8601M - N-Channel Silicon MOSFET (Sanyo)
  • ECH8601R - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA1510A ECH8668 Power MOSFET 20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8 http://onsemi.com Features • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.
Published: |