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ECH8667 - P-Channel Silicon MOSFETs

Key Features

  • P-Channel Silicon MOSFET General-Purpose Switching Device.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1778 ECH8667 SANYO Semiconductors DATA SHEET ECH8667 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=30mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --5.5 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Top View 0.