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Sanyo Electric Components Datasheet

ECH8667 Datasheet

P-Channel Silicon MOSFETs

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Ordering number : ENA1778
ECH8667
SANYO Semiconductors
DATA SHEET
ECH8667
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=30mΩ(typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--30
±20
--5.5
--40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TN
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
8765
1234
http://semicon.sanyo.com/en/network
72110PE TK IM TC-00002432 No. A1778-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8667 Datasheet

P-Channel Silicon MOSFETs

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ECH8667
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2.5A
ID=--2.5A, VGS=--10V
ID=--1.5A, VGS=--4.5V
ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=--15V, VGS=--10V, ID=--5.5A
VDS=--15V, VGS=--10V, ID=--5.5A
VDS=--15V, VGS=--10V, ID=--5.5A
IS=--5.5A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --2.5A
RL=6Ω
D VOUT
ECH8667
P.G 50Ω S
min
--30
Ratings
typ
--1.2
5.2
30
55
58
600
145
110
7.2
23
63
42
13
1.8
3.2
--0.82
max
--1
±10
--2.6
39
77
82
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--3.0 ID -- VDS
--2.5
--2.0
--1.5
--1.0 VGS= --2.5V
--0.5
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT14855
--9
VDS= --10V
--8
ID -- VGS
--7
--6
--5
--4
--3
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT14856
No. A1778-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8667
Description P-Channel Silicon MOSFETs
Maker Sanyo Semicon Device
PDF Download

ECH8667 Datasheet PDF






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