Datasheet4U Logo Datasheet4U.com

FC11 - N-channel FET

Key Features

  • Adoption of FBET process.
  • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
  • The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package.
  • Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
  • Common source. Package Dimensions unit:mm 2070 [FC11] Electrical Connection G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FC1005 High Frequency Resistor Vishay
FC100A Power Modules / DC-DC Converters Agere Systems
FC100F Power Modules / DC-DC Converters Agere Systems
FC106 Fibre Channel Transceiver STMicroelectronics
FC1206 High Frequency Resistor Vishay

Other Datasheets by SANYO (now Panasonic)

Part Number Description
FC110 NPN Transistor
FC111 PNP Transistor
FC112 NPN Transistor
FC113 PNP Transistor
FC114 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package. · Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp. · Common source.