Datasheet Summary
Ordering number:EN3154
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp, Differential Amp Applications
Features
- Adoption of FBET process.
- posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
- The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package.
- Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
- mon source.
Package Dimensions unit:mm 2070
[FC11]
Electrical Connection
G1:Gate1 G2:Gate2 D2:Drain2 SC:Source mon D1:Drain1 SANYO:CP5
Specifications...