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Sanyo Electric Components Datasheet

FSS294 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8937
FSS294
SANYO Semiconductors
DATA SHEET
FSS294
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=7.8mΩ(typ.)
Input capacitance Ciss=2650pF(typ.)
4V drive
Protection diode in
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm), PW10s
Ratings
40
±20
13
52
3.0
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7005A-002
5.0
85
0.2
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
1
1.27
0.1
1 : Source
2 : Source
TL
3 : Source
4 4 : Gate
0.43 5 : Drain
6 : Drain
Electrical Connection
7 : Drain
8 : Drain
5, 6, 7, 8
SANYO : SOP8
S294
LOT No.
4
1, 2, 3
http://semicon.sanyo.com/en/network
82411PA TKIM TC-00002631 No.8937-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

FSS294 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
FSS294
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=13A
ID=13A, VGS=10V
ID=6.5A, VGS=4.5V
ID=6.5A, VGS=4V
VDS=20V, f=1MHz
See specied Test Circuit.
VDS=20V, VGS=10V, ID=13A
IS=13A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=13A
RL=1.54Ω
D VOUT
FSS294
P.G 50Ω S
min
40
Ratings
typ
1.5
11
7.8
12
15.5
2650
320
235
27
180
154
118
52
9.6
10.5
0.81
max
1
±10
2.6
10.2
17
22
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
13 ID -- VDS
12 °
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V
ID -- VGS
20
18
16
14
12
10
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V
No.8937-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number FSS294
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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FSS294 Datasheet PDF






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