Datasheet4U Logo Datasheet4U.com

FSS232 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON resistance.
  • 4V drive. N-Channel Silicon MOSFET FSS232 Load Switching.

📥 Download Datasheet

Datasheet preview – FSS232

Datasheet Details

Part number FSS232
Manufacturer Sanyo Semicon Device
File Size 39.94 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet FSS232 Datasheet
Additional preview pages of the FSS232 datasheet.

📁 Similar Datasheet

  • FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)
  • FSS230R - N-Channel Power MOSFETs (Intersil Corporation)
  • FSS234 - N-Channel Silicon MOSFET (Sanyo)
  • FSS234D - N-Channel Power MOSFETs (Intersil Corporation)
  • FSS234R - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)
  • FSS23A0D - N-Channel Power MOSFETs (Intersil Corporation)
  • FSS23A0R - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
  • FSS23A4D - 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)
  • FSS23A4R - N-Channel Power MOSFETs (Intersil Corporation)
  • FSS264 - N-Channel Silicon MOSFET (Sanyo)
Other Datasheets by Sanyo Semicon Device
  • FSS238 - Load Switching Applications
  • FSS207 - Ultrahigh-Speed Switching Applications
  • FSS212 - N-Channel Silicon MOSFET
  • FSS216 - DC/DC Converter Applications
  • FSS242 - DC/DC Converter Applications
  • FSS244 - DC / DC Converter Applications
  • FSS250 - N-Channel Silicon MOSFET
  • FSS294 - N-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN6359 Features · Low ON resistance. · 4V drive. N-Channel Silicon MOSFET FSS232 Load Switching Applications Package Dimensions unit:mm 2116 [FSS232] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
Published: |