Datasheet4U Logo Datasheet4U.com

FSS23A0R - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Datasheet Summary

Features

  • 9A, 200V, rDS(ON) = 0.330Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 3.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

📥 Download Datasheet

Datasheet preview – FSS23A0R

Datasheet Details

Part number FSS23A0R
Manufacturer Intersil Corporation
File Size 56.72 KB
Description 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet download datasheet FSS23A0R Datasheet
Additional preview pages of the FSS23A0R datasheet.

📁 Similar Datasheet

  • FSS232 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS234 - N-Channel Silicon MOSFET (Sanyo)
  • FSS238 - Load Switching Applications (Sanyo Semicon Device)
  • FSS207 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • FSS212 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS216 - DC/DC Converter Applications (Sanyo Semicon Device)
  • FSS242 - DC/DC Converter Applications (Sanyo Semicon Device)
  • FSS244 - DC / DC Converter Applications (Sanyo Semicon Device)
  • FSS250 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS264 - N-Channel Silicon MOSFET (Sanyo)
Other Datasheets by Intersil Corporation
  • FSS23A0D - N-Channel Power MOSFETs
  • FSS23A4D - 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS23A4R - N-Channel Power MOSFETs
  • FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS230R - N-Channel Power MOSFETs
  • FSS234D - N-Channel Power MOSFETs
  • FSS234R - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS130D - N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
FSS23A0D, FSS23A0R Data Sheet June 1999 File Number 4485.2 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Published: |