FSS23A4R - N-Channel Power MOSFETs

Datasheet Summary

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specificall

7A, 250V, rDS(ON) = 0.460Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 4nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Speciﬁ.

Intersil Corporation

Part number	FSS23A4R
Manufacturer	Intersil Corporation
File Size	44.15 KB
Description	N-Channel Power MOSFETs
Datasheet	FSS23A4R Datasheet
Additional preview pages of the FSS23A4R datasheet.

Other Datasheets by Intersil Corporation

FSS23A4D - 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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FSS23A0R - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSS230R - N-Channel Power MOSFETs
FSS234D - N-Channel Power MOSFETs
FSS234R - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSS130D - N-Channel Power MOSFET

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June 1998 FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 7A, 250V, rDS(ON) = 0.

Published: Mar 23, 2005 |