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FSS23A4R - N-Channel Power MOSFETs

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specificall

Key Features

  • 7A, 250V, rDS(ON) = 0.460Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 4nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Specifi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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June 1998 FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 7A, 250V, rDS(ON) = 0.