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FSS23A0D - N-Channel Power MOSFETs

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Part number FSS23A0D
Manufacturer Intersil Corporation
File Size 53.99 KB
Description N-Channel Power MOSFETs
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Other Datasheets by Intersil Corporation
  • FSS23A0R - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
  • FSS23A4D - 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS23A4R - N-Channel Power MOSFETs
  • FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS230R - N-Channel Power MOSFETs
  • FSS234D - N-Channel Power MOSFETs
  • FSS234R - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS130D - N-Channel Power MOSFET

Full PDF Text Transcription

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Data Sheet FSS23A0D, FSS23A0R June 1999 File Number 4485.2 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
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