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FSS230R - N-Channel Power MOSFETs

Datasheet Summary

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Features

  • 8A, 200V, rDS(ON) = 0.440Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 3.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

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Datasheet preview – FSS230R

Datasheet Details

Part number FSS230R
Manufacturer Intersil Corporation
File Size 43.66 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet FSS230R Datasheet
Additional preview pages of the FSS230R datasheet.

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Full PDF Text Transcription

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FSS230D, FSS230R June 1998 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 8A, 200V, rDS(ON) = 0.440Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 3.
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