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Sanyo Electric Components Datasheet

FTS2051 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENN8189A
FTS2051
FTS2051
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
4V drive.
Mounting height 1.1mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1000mm2!0.8mm)
Ratings
30
±20
4.5
18
1.2
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : S2051
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
1.2
2.7
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
4.5 S
42 55 m
66 90 m
460 pF
95 pF
75 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71505 MS IM TB-00001620 / 22805PA TS IM TB-00000107 No.8189-1/4
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Sanyo Electric Components Datasheet

FTS2051 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
FTS2051
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
Ratings
min typ max
Unit
11 ns
12 ns
31 ns
18 ns
8.5 nC
1.8 nC
1.3 nC
0.85
1.2 V
Package Dimensions
unit : mm
7006-008
0.65
8
3.0
5
0.425
14
0.25
1 : Drain
2 : Drain
3 : Drain
0.125 4 : Drain
5 : Source
6 : Source
7 : Source
8 : Gate
Switching Time Test Circuit
10V VIN
0V
PW=10µs VIN
D.C.1%
G
VDD=15V
ID=3A
RL=5
D VOUT
P.G 50
S FTS2051
SANYO : TSSOP8
ID -- VDS
5
4
2.5V
3
2
VGS=2.0V
1
0
0 0.2 0.4 0.6 0.8 1.0
Drain-to-Source Voltage, VDS -- V IT05169
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT05170
No.8189-2/4
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Part Number FTS2051
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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FTS2051 Datasheet PDF






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