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Sanyo Electric Components Datasheet

FTS2057 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8989
FTS2057
SANYO Semiconductors
DATA SHEET
FTS2057
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=96mΩ(typ.)
Input capacitance Ciss=1030pF(typ.)
4V drive
Protection diode in
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm)
Ratings
100
±20
3
12
1.3
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7006A-009
3.0
85
0.125
14
0.25
0.65
1 : Drain
2 : Source
3 : Source
4 : Gate
5 : No Contact
6 : No Contact
7 : No Contact
8 : Drain
SANYO : TSSOP8
Product & Package Information
• Package
: TSSOP8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TL
Electrical Connection
1, 8
LOT No.
S2057
4
2, 3
http://semicon.sanyo.com/en/network
82411PE TKIM TC-00002632 No.8989-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

FTS2057 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
FTS2057
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
VDS=20V, f=1MHz
See specied Test Circuit.
VDS=50V, VGS=10V, ID=3A
IS=3A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=50V
ID=3A
RL=16.7Ω
D VOUT
FTS2057
P.G 50Ω S
min
100
Ratings
typ
1.2
5.2
96
105
110
1030
80
42
13
13
62
24
19.4
2.7
4.0
0.81
max
1
±10
2.6
125
150
155
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
3.0 ID -- VDS
Ta=25°C
2.5
2.8V
2.0
1.5
1.0
0.5 VGS=2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT16575
6
VDS=10V
5
ID -- VGS
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-to-Source Voltage, VGS -- V IT16576
No.8989-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number FTS2057
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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FTS2057 Datasheet PDF






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