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MCH3319 - Ultrahigh-Speed Switching Applications

Features

  • Package Dimensions unit : mm 2167A [MCH3319] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 :.

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www.DataSheet4U.com Ordering number : ENN7199 MCH3319 P-Channel Silicon MOSFET MCH3319 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2167A [MCH3319] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 SANYO : MCPH3 Unit --12 ±8 --2.6 -10.4 1.0 150 --55 to +150 V V A A W °C °C Ratings Mounted on a ceramic board (900mm2!0.
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