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MCH5809 - N-Channel Silicon MOSFET DC / DC Converter Applications

Features

  • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3443) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. [SBD].
  • Short reverse recovery time.
  • Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5809] 0.3 0.15 4 5 0.65 2.0 (Bottom view) 0.07 3 2 1 5 4 1 : Gate 2 : Source 3 : Anode 4.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENN7525 MCH5809 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5809 DC / DC Converter Applications Features • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3443) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5809] 0.3 0.15 4 5 0.65 2.0 (Bottom view) 0.07 3 2 1 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 0.
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