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SGF9 - For C to X-band Local Oscillator and Amplifier

Features

  • Package Dimensions unit : mm 0000 [SGF9] 3.
  • Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package. The chip surface is covered with the highly reliable protection film. Automatic surface mounting is available. .05 ±0 1.8 0.5 ±0.05 2 1.8 ±0 .05 2 1 0.4 +0.1 0.1 --0.015 ±0.02 0 to 0.1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dr.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
SGF25 For C- to X-band local oscillator and amplifier
SGF32 N CHANNEL GAASMES TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN*0000 SGF9 N-Channel GaAs MESFET SGF9 For C to X-band Local Oscillator and Amplifier Preliminary Features • Package Dimensions unit : mm 0000 [SGF9] 3 • • Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package. The chip surface is covered with the highly reliable protection film. Automatic surface mounting is available. .05 ±0 1.8 0.5 ±0.05 2 1.8 ±0 .05 2 1 0.4 +0.1 0.1 --0.015 ±0.02 0 to 0.1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID PD Tj Tstg Conditions 4.1 ±0.1 1 : Drain 2 : Source 3 : Gate Ratings 6.0 --5.
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