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Ordering number : ENA0637A
TIG030TS
SANYO Semiconductors
DATA SHEET
TIG030TS
Features
• • • • • •
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. 4V drive. Enhansment type. Built-in gate-to-emitter protection diode. Mounting height 1.1mm, mounting area 19.2mm2. dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP dVCE / dt Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.