Package Dimensions
unit : mm 2048B
[2SC5967]
6.0
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 20.0
3.3
5.0
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.
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Ordering number : ENN7614
2SC5967
NPN Triple Diffused Planar Silicon Transistor
2SC5967
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• • • •
Package Dimensions
unit : mm 2048B
[2SC5967]
6.0
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process.
20.0
3.3
5.0
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
5.45
5.
2SC5967 Datasheet
