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Sanyo Electric Components Datasheet

TT2054 Datasheet

NPN Transistor

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Ordering number : ENN6658
TT2054
NPN Triple Diffused PlanwarwSwi.lDicaotnaSThreaents4Uis.ctoorm
TT2054
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
Package Dimensions
unit : mm
2174
[TT2054]
3.4
16.0
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
2.8
2.0
0.7
123
5.45
5.45
Conditions
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Ratings
1500
800
5
12
25
3.0
80
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
min
800
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2896 No.6658-1/4


Sanyo Electric Components Datasheet

TT2054 Datasheet

NPN Transistor

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
TT2054
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
tstg
tf
Conditions
IC=7.2A, IB=1.8A
IC=7.2A, IB=1.8A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=5A, IB1=1A, IB2=2A
IC=5A, IB1=1A, IB2=2A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --2V
OUTPUT
RL
40
+
470µF
VCC=200V
www.DataSheet4U.com
Ratings
min typ
15
4
3.0
max
3
1.5
7
µs
0.2
Unit
V
V
µs
IC -- VCE
10
9 2.0A 1.8A 1.6A 1.4A
8
7
6
5
4
3
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
2
1
0
0
100
7
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT02455
hFE -- IC
VCE=5V
5
Ta=120°C
3 25°C
2
--40°C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02457
12
10
8
6
4
2
0
0
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
IC -- VBE
VCE=5V
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT02456
VCE(sat) -- IC
IC / IB=5
Ta=120°C
25°C
--40°C
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02458
No.6658-2/4


Part Number TT2054
Description NPN Transistor
Maker Sanyo Semiconductor Corporation
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