2N5430 transistors equivalent, silicon npn power transistors.
*Designed for switching and wide-band amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fi.
*With TO-66 package
*Low collector saturation voltage : VCE(sat)=1.2V(Max)@IC=7A
*Excellent safe operating areas APPLICATIONS
*Designed for switching and wide-band amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Coll.
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