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SavantIC

2N6306 Datasheet Preview

2N6306 Datasheet

Silicon Power Transistors

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N6306
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25
VALUE
500
250
8
8
4
125
200
-65~200
UNIT
V
V
V
A
A
W




SavantIC

2N6306 Datasheet Preview

2N6306 Datasheet

Silicon Power Transistors

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6306
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
250
V
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A
0.8 V
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=2A
5.0 V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=2A
2.3 V
VBE Base-emitter on voltage
IC=3A ; VCE=5V
1.3 V
ICEV Collector cut-off current
VCE=500V; VBE=-1.5V
0.5 mA
ICEO Collector cut-off current
VCE=250V; IB=0
0.5 mA
IEBO Emitter cut-off current
VEB=8V; IC=0
1.0 mA
hFE-1
DC current gain
IC=3A ; VCE=5V
15 75
hFE -2
DC current gain
IC=8A ; VCE=5V
4
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
250 pF
fT Transition frequency
IC=0.3A ; VCE=10V;f=1MHz
5
MHz
Switching times
tr Rise time
0.6 µs
ts Storage time
VCC=125V; IC=3.0A; IB=0.6A
1.6 µs
tf Fall time
0.4 µs
2


Part Number 2N6306
Description Silicon Power Transistors
Maker SavantIC
Total Page 3 Pages
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