| Part number | 2N6306 |
|---|---|
| Datasheet | 2N6306_MicrosemiCorporation.pdf |
| File Size | 54.51 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
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Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6306 | NPN SILICON TRANSISTOR | Central Semiconductor Corp |
 |
2N6306 | Silicon Power Transistors | SavantIC |
 |
2N6306 | Bipolar NPN Device | Seme LAB |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N6303 | Silicon PNP Power Transistors |
| 2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 2N6308 | NPN POWER SILICON TRANSISTOR |
| 2N6338 | NPN POWER SILICON TRANSISTOR |
| 2N6341 | NPN POWER SILICON TRANSISTOR |
| 2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6351 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6352 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6353 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6383 | NPN DARLINGTON POWER SILICON TRANSISTOR |
