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2N6306

2N6306 is NPN POWER SILICON TRANSISTOR manufactured by Microsemi.
2N6306 datasheet preview

2N6306 Datasheet

Part number 2N6306
Download 2N6306 Datasheet (PDF)
File Size 54.51 KB
Manufacturer Microsemi
Description NPN POWER SILICON TRANSISTOR
2N6306 page 2

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2N6306 Distributor

2N6306 Description

Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc;.

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