2N6306 Description
Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc;.
| Part number | 2N6306 |
|---|---|
| Download | 2N6306 Datasheet (PDF) |
| File Size | 54.51 KB |
| Manufacturer | Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
| 2N6306 | NPN SILICON TRANSISTOR | |
SavantIC |
2N6306 | Silicon Power Transistors |
Seme LAB |
2N6306 | Bipolar NPN Device |
Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc;.