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2N6308 - Transistor

General Description

High voltage, TO-3, NPN, Silicon, Power Transistor.

operated amplifier applications.

Especially well suited for switching power supply applications in associated consumer products.

Key Features

  •   Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max. ) @ IC - 3A.
  •   Current Gain-bandwidth Product : 5MHz (Min. ) @ IC - 0.3A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 700V : 350V : 8V : 8A : 4A : 125W :.

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Datasheet Details

Part number 2N6308
Manufacturer Multicomp
File Size 339.83 KB
Description Transistor
Datasheet download datasheet 2N6308 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor Description: High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage inverters, switching regulators and line – operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products. Features: •  Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A •  Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 700V : 350V : 8V : 8A : 4A : 125W : 0.