2N6308 Datasheet PDF

DESCRIPTION

: High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage inverters, switching regulators and line – operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products.

FEATURES

:
● Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A
● Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A

ABSOLUTE MAXIMUM RATINGS

: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 700V : 350V : 8V : 8A : 4A : 125W : 0.714mW/°C : -65°C to +200°C : -65°C to +200°C

ELECTRICAL CHARACTERISTICS

: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage Coll