Seme LAB 2N6301
DARLINGTON SILICON POWER TRANSISTORS
| Part No. | 2N6301 |
|---|---|
| Datasheet | 2N6301 Download |
| Manufacturer |  Seme LAB |
| Description | DARLINGTON SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – CollectorFEATURES
● High DC Current Gain● Monolithic Construction with Built-in Base–Emitter Shunt Resistors
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector – Emitter Voltage 60V 80V VCBO Collector – Base Voltage 60V 80V VEBO Emitter – Base Voltage 5V IC Collector Current Continuous 8A Peak 16A IB Base Current PD Total Dissipation @ TC = 25°C Derate above 25°C 120mA 100W 75W 0.571W/°C 0.428W/°C TSTG , TJ TθJC Operating and Storage Junction Temperature Range Thermal Resistance – Jun...
