2N6301 - NPN Darlington Power Silicon Transistor

VPT

Download the 2N6301 datasheet PDF. This datasheet also covers the 2N6300 variant, as both devices belong to the same npn darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-500/539.
TO-66 (TO-213AA) Package.
Designed for High Gain Amplifier and Medium Speed Switching.

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2N6301 npn darlington power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6300-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6301
Manufacturer	VPT
File Size	418.75 KB
Description	NPN Darlington Power Silicon Transistor
Datasheet	2N6301 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6300	NPN Darlington Power Silicon Transistor
2N6338	NPN High Power Silicon Transistor
2N6341	NPN High Power Silicon Transistor
2N6351	NPN Darlington Power Silicon Transistor
2N6353	NPN Darlington Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.