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SavantIC

2N6371 Datasheet Preview

2N6371 Datasheet

Silicon Power Transistor

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SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High dissipation capability
·Excellent safe operating area
APPLICATIONS
·Series and shunt regulators
·High-fidelity amplifiers
·Power-switching circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6371
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
40
5
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.5
UNIT
/W




SavantIC

2N6371 Datasheet Preview

2N6371 Datasheet

Silicon Power Transistor

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6371
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A
VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A
VBE Base-emitter on voltage
IC=16A ; VCE=4V
ICEO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCE=25V; IB=0
VCE=45V;VBE(off)=1.5V
VCE=40V;VBE(off)=1.5V;TC=150
VEB=5V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
DC current gain
IC=16A ; VCE=4V
fT Transition freuqency
IC=1A ; VCE=4V
40 V
1.5 V
4.0 V
4.0 V
1.5 mA
2.0
10.0
mA
10 mA
15 60
4
0.8 MHz
2


Part Number 2N6371
Description Silicon Power Transistor
Maker SavantIC
PDF Download

2N6371 Datasheet PDF






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