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2N6371 - HIGH POWER SILICON NPN TRANSISTORS

This page provides the datasheet information for the 2N6371, a member of the 2N6253 HIGH POWER SILICON NPN TRANSISTORS family.

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Datasheet Details

Part number 2N6371
Manufacturer Comset Semiconductors
File Size 138.81 KB
Description HIGH POWER SILICON NPN TRANSISTORS
Datasheet download datasheet 2N6371 Datasheet
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Full PDF Text Transcription

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NPN 2N6253 – 2N6254 – 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal package. Tey are intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO(SUS) Collector-Emitter Voltage Ratings 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 Value Unit www.DataSheet.net/ VCBO Collector-Base Voltage (*) Collector-Emitter Voltage RBE=100Ω Collector-Emitter Voltage VBE=-1.
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