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SavantIC

2N6496 Datasheet Preview

2N6496 Datasheet

Silicon Power Transistor

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6496
DESCRIPTION
·With TO-3 package
·High collector current rating
·High power dissipation capability
·Wide area of safe operation
APPLICATIONS
·For switching and amplifier circuits in
Industrial and commercial applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
150
110
7
15
5
140
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.25
UNIT
/W




SavantIC

2N6496 Datasheet Preview

2N6496 Datasheet

Silicon Power Transistor

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6496
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=50mA ;IC=0
VCEsat Collector-emitter saturation voltge
IC=8A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
VBE Base-emitter on voltage
IC=8A ; VCE=2V
ICEO Collector cut-off current
ICEV Collector cut-off current
IEBO Emitter cut-off current
VCE=90V; IB=0
VCE=130V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE DC current gain
IC=8A ; VCE=2V
COB Output capacitance
IE=0;VCB=10V;f=1MHz
MIN TYP. MAX UNIT
80 V
7V
1.0 V
2.0 V
1.8 V
1.0 mA
2.0
5.0
mA
1.0 mA
12 100
400 pF
2


Part Number 2N6496
Description Silicon Power Transistor
Maker SavantIC
PDF Download

2N6496 Datasheet PDF






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